Part Number Hot Search : 
IR2125Z SA130 TY24MX SR306 13005 31300 107AF BA3516
Product Description
Full Text Search

BLF7G10L-250 - Power LDMOS transistor BLF7G10LS-250<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G10LS-250<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;

BLF7G10L-250_1689107.PDF Datasheet


 Full text search : Power LDMOS transistor BLF7G10LS-250<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G10LS-250<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;


 Related Part Number
PART Description Maker
BLF6G21-10G Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
NXP Semiconductors N.V.
BLL1214-250R L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
NXP Semiconductors N.V.
BLF6G27LS-40P BLF6G27L-40P 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
BLF6G22L-40BN 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
LB421-14 RF POWER LDMOS TRANSISTOR
   SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
BLS7G2325L-105 BLS7G2325L-105-15 Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
   Power LDMOS transistor
NXP Semiconductors N.V.
MAPLST1617-030CF MAPLST1617-030CF-15 LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
M/A-COM Technology Solu...
MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
   LDMOS Pulsed Power Transistor
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR    COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
LP702-14 RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
BLF7G20L-160P Power LDMOS transistor
Philips Semiconductors
BLF7G15LS-200 Power LDMOS transistor
NXP Semiconductors N.V.
 
 Related keyword From Full Text Search System
BLF7G10L-250 Microcontroller BLF7G10L-250 System BLF7G10L-250 crystal BLF7G10L-250 positive BLF7G10L-250 Analog
BLF7G10L-250 Regulator BLF7G10L-250 mode BLF7G10L-250 register BLF7G10L-250 cantherm BLF7G10L-250 SePIC
 

 

Price & Availability of BLF7G10L-250

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.16107201576233